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| MMBT4403WT1 Switching Transistor PNP Silicon Features * Moisture Sensitivity Level: 1 * ESD Rating: Human Body Model; 4 kV, * Pb-Free Package is Available Machine Model; 400 V http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Symbol PD RqJA TJ, Tstg Value -40 -40 -5.0 -600 Unit Vdc Vdc Vdc mAdc 1 BASE 2 EMITTER 3 1 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board TA = 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Max 150 833 -55 to +150 Unit mW C/W C 2 SC-70 CASE 419 STYLE 3 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 2T D 2T = Specific Device Code D = Date Code ORDERING INFORMATION Device MMBT4403WT1 MMBT4403WT1G Package SC-70 SC-70 (Pb-Free) Shipping 3000/T ape & Reel 3000/T ape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2005 March, 2005 - Rev. 2 1 Publication Order Number: MMBT4403WT1/D MMBT4403WT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 1) (IC = -1.0 mAdc, IB = 0) Collector-Base Breakdown Voltage (IC = -0.1 mAdc, IE = 0) Emitter-Base Breakdown Voltage (IE = -0.1 mAdc, IC = 0) Base Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) Collector Cutoff Current (VCE = -35 Vdc, VEB = -0.4 Vdc) ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -1.0 Vdc) (IC = -1.0 mAdc, VCE = -1.0 Vdc) (IC = -10 mAdc, VCE = -1.0 Vdc) (IC = -150 mAdc, VCE = -2.0 Vdc) (Note 1) (IC = -500 mAdc, VCE = -2.0 Vdc) (Note 1) Collector-Emitter Saturation Voltage (Note 1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) Base-Emitter Saturation Voltage (Note 1) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) SMALL-SIGNAL CHARACTERISTICS Current-Gain - Bandwidth Product (IC = -20 mAdc, VCE = -10 Vdc, f = 100 MHz) Collector-Base Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Emitter-Base Capacitance (VBE = -0.5 Vdc, IC = 0, f = 1.0 MHz) Input Impedance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Voltage Feedback Ratio (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Small-Signal Current Gain (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) Output Admittance (IC = -1.0 mAdc, VCE = -10 Vdc, f = 1.0 kHz) SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (VCC = -30 Vdc, VEB = -2.0 Vdc, 30 2.0 IC = -150 mAdc, IB1 = -15 mAdc) (VCC = -30 Vdc, IC = -150 mAdc, 30 150 IB1 = IB2 = -15 mAdc) td tr ts tf - - - - 15 20 225 30 ns fT Ccb Ceb hie hre hfe hoe 200 - - 1.5 0.1 60 1.0 - 8.5 30 15 8.0 500 100 MHz pF pF kW X 10- 4 - mmhos hFE 30 60 100 100 20 - - -0.75 - - - - 300 - -0.4 -0.75 -0.95 -1.3 - V(BR)CEO V(BR)CBO V(BR)EBO IBEV ICEX -40 -40 -5.0 - - - - - -0.1 -0.1 Vdc Vdc Vdc mAdc mAdc Symbol Min Max Unit VCE(sat) Vdc VBE(sat) Vdc ns 1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. SWITCHING TIME EQUIVALENT TEST CIRCUIT -30 V < 2 ns +2 V 0 1.0 kW -16 V 10 to 100 ms, DUTY CYCLE = 2% CS* < 10 pF 200 W +14 V 0 -16 V < 20 ns -30 V 200 W 1.0 kW CS* < 10 pF 1.0 to 100 ms, DUTY CYCLE = 2% +4.0 V Scope rise time < 4.0 ns *Total shunt capacitance of test jig connectors, and oscilloscope Figure 1. Turn-On Time Figure 2. Turn-Off Time http://onsemi.com 2 MMBT4403WT1 TRANSIENT CHARACTERISTICS 25C 30 20 CAPACITANCE (pF) Ceb Q, CHARGE (nC) 10 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 REVERSE VOLTAGE (VOLTS) 20 30 0.1 10 20 100C VCC = 30 V IC/IB = 10 10 7.0 5.0 Ccb QT QA 30 50 70 100 200 IC, COLLECTOR CURRENT (mA) 300 500 Figure 3. Capacitances Figure 4. Charge Data 100 70 50 t, TIME (ns) 30 20 t r , RISE TIME (ns) tr @ VCC = 30 V tr @ VCC = 10 V td @ VBE(off) = 2 V td @ VBE(off) = 0 IC/IB = 10 100 70 50 30 20 VCC = 30 V IC/IB = 10 10 7.0 5.0 10 20 30 50 70 100 200 300 500 10 7.0 5.0 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 5. Turn-On Time Figure 6. Rise Time 200 IC/IB = 10 t s, STORAGE TIME (ns) 100 70 50 IB1 = IB2 ts = ts - 1/8 tf 30 20 IC/IB = 20 10 20 30 50 70 100 200 300 500 IC, COLLECTOR CURRENT (mA) Figure 7. Storage Time http://onsemi.com 3 MMBT4403WT1 SMALL-SIGNAL CHARACTERISTICS NOISE FIGURE VCE = -10 Vdc, TA = 25C; Bandwidth = 1.0 Hz 10 8 NF, NOISE FIGURE (dB) IC = 1.0 mA, RS = 430 W IC = 500 mA, RS = 560 W IC = 50 mA, RS = 2.7 kW IC = 100 mA, RS = 1.6 kW NF, NOISE FIGURE (dB) 10 f = 1 kHz 8 6 4 2 6 4 IC = 50 mA 100 mA 500 mA 1.0 mA RS = OPTIMUM SOURCE RESISTANCE 2 0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 f, FREQUENCY (kHz) Figure 8. Frequency Effects Figure 9. Source Resistance Effects 500 1 k 2 k 5 k 10 k 20 k RS, SOURCE RESISTANCE (OHMS) 50 k h PARAMETERS VCE = 10 Vdc, f = 1.0 kHz, TA = 25C This group of graphs illustrates the relationship between hfe and other "h" parameters for this series of transistors. To obtain these curves, a high-gain and a low-gain unit were selected from the MMBT4403LT1 lines, and the same units were used to develop the correspondingly numbered curves on each graph. 1000 700 500 hfe , CURRENT GAIN 300 200 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 k hie , INPUT IMPEDANCE (OHMS) 50 k 20 k 10 k 5k 2k 1k 500 200 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 100 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 70 50 30 IC, COLLECTOR CURRENT (mAdc) Figure 10. Current Gain Figure 11. Input Impedance 500 hoe, OUTPUT ADMITTANCE (m mhos) IC, COLLECTOR CURRENT (mAdc) h re , VOLTAGE FEEDBACK RATIO (X 10-4 ) 20 10 5.0 2.0 1.0 0.5 0.2 0.1 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 100 50 20 10 5.0 2.0 1.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 MMBT4403LT1 UNIT 1 MMBT4403LT1 UNIT 2 IC, COLLECTOR CURRENT (mAdc) IC, COLLECTOR CURRENT (mAdc) Figure 12. Voltage Feedback Ratio Figure 13. Output Admittance http://onsemi.com 4 MMBT4403WT1 STATIC CHARACTERISTICS 3.0 h FE, NORMALIZED CURRENT GAIN 2.0 VCE = 1.0 V VCE = 10 V TJ = 125C 25C 1.0 0.7 0.5 0.3 0.2 0.1 -55C 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 IC, COLLECTOR CURRENT (mA) 30 50 70 100 200 300 500 Figure 14. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 0.8 0.6 IC = 1.0 mA 10 mA 100 mA 500 mA 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 IB, BASE CURRENT (mA) 2.0 3.0 5.0 7.0 10 20 30 50 Figure 15. Collector Saturation Region 1.0 0.8 VOLTAGE (VOLTS) TJ = 25C VBE(sat) @ IC/IB = 10 COEFFICIENT (mV/ C) VBE(sat) @ VCE = 10 V 0.5 0 0.5 1.0 1.5 2.0 VCE(sat) @ IC/IB = 10 2.5 0.1 0.2 qVS for VBE qVC for VCE(sat) 0.6 0.4 0.2 0 0.1 0.2 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 0.5 50 100 200 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 500 Figure 16. "On" Voltages Figure 17. Temperature Coefficients http://onsemi.com 5 MMBT4403WT1 PACKAGE DIMENSIONS SC-70/SOT-323 CASE 419-04 ISSUE L A L NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D G H J K L N S INCHES MIN MAX 0.071 0.087 0.045 0.053 0.032 0.040 0.012 0.016 0.047 0.055 0.000 0.004 0.004 0.010 0.017 REF 0.026 BSC 0.028 REF 0.079 0.095 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.00 0.30 0.40 1.20 1.40 0.00 0.10 0.10 0.25 0.425 REF 0.650 BSC 0.700 REF 2.00 2.40 3 S 1 2 B D G C 0.05 (0.002) H N K J STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches SC-70/SOT-323 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 MMBT4403WT1/D |
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